In November 2012, Vishay Intertechnology Inc introduced new 12 V and 20 V n-channel and p-channel TrenchFET power MOSFETs with lowest on-resistance.
Features and USP: The MOSFETs’ compact outlines save PCB space and provide ultra-thin profiles to enable slimmer and lighter portable electronics, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices’ low on-resistance also means a lower voltage drop across the load switch that prevents unwanted under-voltage lockout. For the first time in this form factor, the MOSFETs are built on an ultra high density technology that uses self-aligning techniques to pack one billion transistor cells into each square inch of silicon. When combined with MICRO FOOT’s package less CSP technology, this provides the lowest on-resistance possible for a given area.
For further details: Vishay Intertechnology Asia Pte Ltd; Ph: 65-6788-6668; [email protected].
