AMOSFET is a special type of field-effect transistor that works by electronically varying the width of a channel along which charge carriers flow. An IGBT, on the other hand, is a power transistor that has characteristics of both MOSFETs and bipolar junction transistors (BJTs). Some typical IGBT applications include motor control, where the operating frequency is < 20 kHz and short circuit/in-rush limit protection is required. Typical MOSFET applications include switch-mode power supplies using hard switching above 200 kHz or ZVS below 1000 W. Battery charging is another common use for MOSFETs.
Monday, April 15, 2013: Relays are switches that open and close circuits electromechanically or electronically. Relays are either electromechanical relays or solid-state relays. In electromechanical relays (EMR), contacts are opened or closed by a magnetic force. With solid-state relays (SSR), there are no contacts and switching is totally electronic. Let’s have a look at the new launches in the IGBT, MOSFET and relay in 2012-13
Model: CPC1907B, Product: Relay, Brand: IXYS, Manufacturer: IXYS Corporation, USA
Launched in February 2013, CPC1907B is a 60 V AC power solid state relay (SSR) with very low 0.06 ohms of on-resistance, and it is offered in the new power SOIC package.
Key features
(1)It provides input-to-output isolation of 5000 Vrms, while optically coupled circuitry provides exceptional noise immunity.
(2)Controlled by the photovoltaic die using the patented OptoMOS architecture
(3)A combination of low on-resistance and high load current handling capabilities makes this relay suitable for a variety of high-performance switching applications
Contact details: Steve Darrough, VP, marketing, IXYS Corporation, [email protected], Ph: 408-644-6534, www.ixys.com
India distributor: BBS India (Singapore)
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Model: IRGP4640/650/660D, Product: IGBT, Brand: IR, Manufacturer: International Rectifier Corporation, USA
Launched in February 2013, IRGP4640D, IRGP4650D and IRGP4660D IGBTs are optimised for uninterruptible power supplies (UPS), solar power, induction heating, industrial motor and welding applications. These IGBTs utilise trench thin wafer technology to offer lower conduction and switching losses.
Key features
(1)Delivers higher system efficiency and rugged transient performance.
(2)Offered in an industry standard TO-247 package, with a maximum junction temperature of 175 °C and low EMI for improved reliability.
Contact details: Ph: (310) 726-8000, www.irf.com
India distributors: Avnet India Pvt Ltd and Arrow Electronics India Pvt Ltd
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Model: SiB456DK/SiA416DJ, Product: MOSFET, Brand: Vishay, Manufacturer: Vishay Intertechnology, USA
Launched in January 2013, SiB456DK and SiA416DJ are available in the compact, thermally enhanced PowerPAK SC-75 (1.6 mm by 1.6 mm) and PowerPAK SC-70 (2 mm by 2 mm) footprints.
Key features
(1)The on-resistance rating down to 4.5 V simplifies gate drives
(2)In applications where on-resistance is more critical than size, the 2 mm by 2 mm SiA416DJ offers a maximum on-resistance of 83 mΩ at 10 V and 130 mΩ at 4.5 V.
(3)SiB456DK features a maximum on-resistance of 185 mΩ at 10 V and 310 mΩ at 4.5 V, and an FOM of (4)611 mΩ-nC at 10 V and 558 mΩ-nC at 4.5 V
Contact details: Ph: 1-402-563-6866; [email protected]; www.vishay.com
India distributors: Arrow Electronics India Pvt Ltd, Arihant Electricals
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Model: SSM6J505NU and SSM6J216FE, Product: MOSFET, Brand: Toshiba Corporation, Manufacturer: Toshiba Corporation, Japan
Launched in February 2013, the P-ch MOSFETs—the SSM6J505NU and SSM6J216FE—are ideal for switches of high-current charging circuits, as well as for switches of mobile devices such as smartphones and tablets.
Key features
(1)High-current
(2)Low ON-resistance
(3)Low capacitance
(4)High-power dissipation package line-up including small packages
Contact details: Ph: +81-3-3457-3405, [email protected], www.toshiba.co.jp
India branch: Toshiba India Pvt Ltd
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Model: GT5G134, Product: IGBT, Brand: Toshiba, Manufacturer: Toshiba Corporation, Japan
Launched in January 2013, the GT5G134 has been developed as a dedicated solution for photo-flash intensity control and high-speed-switching photo flash applications.
Key features
(1)High-speed switching: tf = 0.6µs (typ.) @IC=110A
(2)Low saturation voltage: VCE(sat) =2.2V (typ.) @IC=110A
(3)Low gate driving voltage: VGE= 4.0V (min.) @IC=110A
(4)Peak collector current: ICP= 110A (max)
(5)Collector-emitter voltage: VCES =400V
Contact details: Ph: +81-3-3457-3405, [email protected], www.toshiba.co.jp
India branch: Toshiba India Pvt Ltd
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Model: G9EN, Product: Relay, Brand: Omron, Manufacturer: Omron Corporation, Japan
Launched in October 2012, G9EN DC power relay is 50 per cent smaller and lighter than Omron’s previous comparable relays due to the use of newly developed proprietary sealing technologies and new magnetic control methods.
Key features
(1)50 per cent reduction in volume (28 x 40 x 50 mm) and weight (140 g) compared to previous models
(2)It comes with a non-polarised contact circuit, which contributes not only to device downsizing and weight-reduction, but also makes wiring and mounting much simpler
Contact details: Koichi Udo, DC relay department, Ph: +81-968-44-4118, [email protected], www.omron.com
India office: Omron Electronic Components Pte Ltd
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Model: AOTF11C60 and AOTF20C60, Product: MOSFET, Brand: Alpha and Omega, Manufacturer: Alpha and Omega Semiconductor, USA
Launched in February 2013, the AOTF11C60 and AOTF20C60 600 V MOSFETs with AlphaMOS II technology combine planar-like robustness and controlled switching characteristics with the low on-resistance performance of super-junction type devices.
The AOTF11C60 and AOTF20C60 are ideally suited for high-voltage applications where reliability and performance are critical. Such applications include server, telecom and networking power supplies, uninterruptible power supplies, solar inverters, industrial motor control systems, and LED lighting.
Key features
(1)600 V N-channel MOSFETs
(2)RDS(ON) (3)COSS=108 pF typ for AOTF11C60 and 190 pF typ for AOTF20C60
(4)Qg (10V)=30 nC typ for AOTF11C60 and 52 nC typ for AOTF20C60
Contact details: Ph: +1-408-830-9742; [email protected], www.aosmd.com
India distributor: GS Technology Pte Ltd
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Model: Super-mini DIPIPM, Product: MOSFET, Brand: Mitsubishi Electric, Manufacturer: Mitsubishi Electric Corporation, Japan
Launched in February 2013, the transfer-mould-type MOSFET, which is a super-mini dual inline package intelligent power module (DIPIPM), is primarily used for inverter drive systems of small-capacity motors in refrigerators and other consumer appliances. The module uses a MOSFET switching device featuring low power-on voltage in low current regions. The module will help to reduce power consumption, advance miniaturisation and lower the cost of inverter systems for small-capacity motor drive applications.
Key features
(1)Reduced power consumption in small-capacity inverter systems
(2)Reduction of recovered-power loss by optimising the MOSFET process
(3)Reduction of IC power loss by optimising the control IC
(4)High reliability through high-heat dissipation structure
(5)Suppression of channel temperature rise by reducing power loss of the switching device and the application of a high-heat dissipation insulation sheet
(6)Reduction of external components thanks to a built-in bootstrap diode (BSD) with a current limiting resistor
Contact details: Ph: +81 3-3218-2111, www.mitsubishielectric.com
India branch: Mitsubishi Electric India Pvt Ltd
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Model: µPA276 (4/5/6) T1A, Product: MOSFET, Brand: Renesas, Manufacturer: Renesas Electronics Corporation, Japan
Launched in January 2013, these three new low on-state resistance MOSFETs—µPA2764T1A, µPA2765T1A and µPA2766T1A are optimised for use as ORing FETs in power supply units for network servers and storage systems.
Key features
(1)On-state resistance of 0.72 mΩ (typical value) for 30 V applications in a small 5 mm × 6 mm package is less than the on-state resistance of previous Renesas products by approximately half
(2)Contribute to improved power efficiency for the overall system by reducing the conduction loss of the ORing FETs for power supply units used in network servers and storage systems
The 8-pin HVSON package provides low package resistance because a metal plate is used to connect the FET die within the package to the pins.
(3)Help to reduce equipment size by enabling the use of the minimum number of parallel connections when multiple ORing FETs are connected in parallel to each of the power supply units in order to supply a large current
Contact details: Ph: +65 6213 0200; sg.renesas.com
India distributors: Avnet India Pvt Ltd, Arrow Electronics India Pvt Ltd
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Model: FGA20/25/30S125P and FGA20S140P, Product: IGBT, Brand: Fairchild, Manufacturer: Fairchild Semiconductor, USA
Launched in January 2013, this IGBT family, ranging from 1100-1400 V, is optimised with intrinsic anti-parallel diodes for soft switching applications. With advancements over the typical non-punch-through (NPT) IGBT technology, Fairchild’s shorted-anode silicon technology offers a lower saturation voltage that is about 12 per cent less than NPT-trench IGBTs of the same rating. Additionally, when compared to the competitor’s IGBT offerings, this product family offers a lower tail-current rate of over 20 per cent.
Key features
(1)This family has a high-speed switching frequency range of 10 to 50 kHz
(2)Lowest tail-current in the industry for improved switching efficiency (FGA20S140P)
(3)Lower saturation voltage drop than existing NPT trench IGBTs
(4)Robust pot detection noise immunity for reliability
(5)High temperature stable behaviour: Tj(max) = 175 degree C
(6)RoHS compliant (Pb-free lead plating)
Contact details: Edwin Lee, senior marketing manager, [email protected], www.fairchildsemi.com
India distributors: Avnet India Pvt Ltd, Arrow Electronics India Pvt Ltd
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Model: NextPower Live, Product: MOSFET, Brand: NXP, Manufacturer: NXP Semiconductors, The Netherlands
Launched in January 2013, NextPower Live portfolio is a new family of linear mode power MOSFETs designed specifically for use in a ‘hot-swap’ environment. The NextPower Live family offers both excellent linear mode performance and a very low RDS(on) value, a unique combination demonstrating NXP’s expertise in this area. NXP is also developing NextPower Live MOSFETs for a range of other linear mode-related applications such as Power-over-Ethernet (PoE).
Key features
(1)This range of MOSFETs incorporate 30 V devices for applications such as blade servers operating on a 12 V DC supply, and 100 V devices for telecommunications applications operating on a nominal 48 V DC supply
(2)Both voltage ranges come in D2PAK and LFPAK56 (Power-SO8 compatible) packages
Contact details: Ph: +31-40-27-29960, www.nxp.com
India distributor: Arrow Electronics India Pvt Ltd
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Model: CoolMOS P6, Product: MOSFET, Brand: Infineon, Manufacturer: Infineon Technologies, USA
Launched in November 2012, 600 V CoolMOS P6 MOSFET product family is designed to enable higher system efficiency while being easy to use, and address the gap between technologies that focus on delivering ultimate performance (CoolMOS CP) and those that concentrate more on ease of use (e.g., CoolMOS C6 or E6). P6 technology provides high performance in hard and soft switching power factor correction (PFC) and pulse-width modulation (PWM) topologies in applications such as server, telecom rectifier, PC silverbox and gaming consoles.
Key features
(1)Provides improved efficiency especially in light load conditions due to its low gate charge (Qg)
(2)Higher threshold voltage (Vth) results in earlier turn-off behaviour for better efficiency in soft switching applications
(3)Robust body diode allows the use of P6 not only in hard switching PFC stages but also in soft switching PWM (e.g., LLC) stages
(4)Optimised integrated Gate Resistor values ensure an optimum balance between efficiency and ease of use, as well as a good control of the switching behaviour
Contact details: Ren Sun, product marketing manager, Ph: +49 800-951951951, www.infineon.com
India distributors: Arrow Electronics India Pvt Ltd, Arihant Electricals
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Model: NGBTxx family, Product: IGBT, Brand: ON Semiconductor Manufacturer: ON Semiconductor, USA
Launched in October 2012, NGBTxx series improves overall system switching efficiency, lowers power dissipation and enhances system reliability. These devices expand the available product ratings up to 40 A. They specifically target high performance power conversion in solar power and uninterruptible power supply implementations.
Key features
(1)Robust and cost effective trench technology construction provides superior performance in high frequency switching applications
(2)Highly optimised for switching applications with frequencies from 10 kHz to 40 kHz, delivering low on-state voltage (VCEsat) and low gate charge (Qg) characteristics, as well as exhibiting ultra-fast recovery and minimal switching losses to keep power dissipation low.
(3)NGTB30N120LWG and NGTB40N120LWG offer low VCEsat and rugged short circuit characteristics with fast recovery diodes for low frequency (2-20 kHz) hard switching applications, such as motor control inverter applications.
Contact details: Paul Leonard, VP&GM, power MOSFET division, Ph: 1- 602-244-6600, [email protected], www.onsemi.com
India distributors: Avnet India Pvt Ltd, Arrow Electronics India Pvt Ltd, Future Electronics
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