Tuesday, June 17, 2014:
In April 2014, STMicroelectronics introduced its HB series of insulated-gate bipolar transistors (IGBTs) with claims of up to 40 per cent lower turn-off energy losses than competing high-frequency devices and 30 per cent lower conduction losses. The HB series has a minimal collector-current turn-off tail as well as low saturation voltage (Vce(sat), which is down to 1.6V (typically), hence minimising energy losses during switching and when turned on. In addition, the technology is well controlled, producing a tight distribution window of parameters, enhancing repeatability and simplifying system design. ST’s HB series of IGBTs enhance the energy efficiency of solar inverters, induction heaters, welders, UPS systems, as well as power-factor correction and other high-frequency power converters.
For further details: Ph: 080-66514000, www.st.com
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Electronics Bazaar, South Asia’s No.1 Electronics B2B magazine