Tuesday, June 17, 2014: STMicroelectronics and Samsung Electronics Co. Ltd have signed a comprehensive agreement on 28nm Fully Depleted Silicon-on-Insulator (FD-SOI) technology, that will provide customers with advanced manufacturing solutions from Samsung’s 300mm facilities while assuring high-volume production for ST’s FD-SOI technology. The multi-source manufacturing collaboration includes ST’s fully developed process technology as well as design enabling ecosystem.
The agreement will essentially lead to the development of faster, cooler, and simpler semiconductor devices to meet the growing need for higher-performance, lower-power systems-on-chips for next-generation electronic devices like mobile phones. Thanks to the agreement, customers can now enjoy the best of both worlds: Samsung’s and ST’s and their comprehensive know-how of high-volume manufacturing technology. The Samsung 28nm FD-SOI process will be ready for volume production as early as early 2015.
Meanwhile, Synopsys Inc, a global software, IP and services major has also announced its collaboration with STMicroelectronics, enabling broader market adoption of ST’s 28-nm FD-SOI technology for SoC design. “The close collaboration between ST design teams and Synopsys led to advanced silicon-proven design enablement solutions that fully leverage the performance and power promise of FD-SOI technology and provide the foundation needed to meet tight time to market windows,” Philippe Magarshack, executive vice president, Design Enablement and Services, STMicroelectronics was quoted as saying.
