The company said in a statement that when Phase 1 reaches full capacity, Toshiba’s power semiconductor production capacity will be 2.5 times that of fiscal 2021
Japanese conglomerate Toshiba has announced that it will invest around 125 billion yen ($1.09 billion) to construct a new 300-milimeter wafer fabrication facility for power semiconductors.
The new fab will be located at its main discrete semiconductor production base, Kaga Toshiba Electronics Corporation, in Ishikawa Prefecture.
Construction will take place in two phases, said the company, allowing the pace of investment to be optimized against market trends, with the production start of Phase 1 scheduled for within fiscal 2024.
The company said in a statement that when Phase 1 reaches full capacity, Toshiba’s power semiconductor production capacity will be 2.5 times that of fiscal 2021.
Decisions on the new fab’s overall capacity and equipment investment, the start of production, production capacity and production plan will reflect market trends, it further said.
The new fab will have a quake absorbing structure; enhanced BCP systems, including dual power supply lines; and the latest energy saving manufacturing equipment.
