SK Hynix plans to use the EUV technology for production of all its 1anm DRAM products going forward as it has proved the stability of the process
SK Hynix has started mass production of the 8 Gigabit (Gb) LPDDR4 mobile DRAM based on the 1anm, which is the fourth generation of the 10nm process technology. This is the first time that SK Hynix adopted the *EUV equipment (EUV (Extreme Ultraviolet): lithography technology that uses extreme ultraviolet) for mass production after proving the stability of the cutting edge lithography technology through partial adoption for its 1ynm DRAM production.
“With improved productivity and cost competitiveness, the latest 1anm DRAM will not only help secure high profitability, but also solidify SK Hynix’s status as a leading technology company with early adoption of the EUV lithography technology for mass production,” noted Cho Youngmann, Vice President at SK Hynix.
The company noted that it will apply its 1anm technology to its DDR5 products, the world’s first next-generation DRAM launched in October 2020, from early next year. The company expects the new technology to bring an improvement in productivity, and further boost cost competitiveness.
As the semiconductor industry classifies the 10nm DRAM products, naming them after the alphabets, the 1a technology is the fourth generation, following the first three generations of the 1x, 1y, and 1z. SK hynix plans to provide the latest mobile DRAM products to smartphone manufacturers from the second half of 2021.
The company expects the 1anm technology to lead to a 25 per cent increase in the number of DRAM chips produced from the same size of a wafer, compared with the previous 1znm node. SK hynix anticipates that the 1anm DRAM will also likely help alleviate the supply and demand conditions of the global markets following an increase in DRAM demand globally.
SK Hynix plans to use the EUV technology for production of all its 1anm DRAM products going forward as it has proved the stability of the process.
