- Samsung said that it is the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.1 for use in flagship smartphones
- The company is manufacturing the new eUFS at its Xi’an line in China
Korea-based Samsung Electronics has announced that it has begun mass producing the industry’s first 512-gigabyte (GB) eUFS (embedded Universal Flash Storage) 3.1 for use in flagship smartphones. The company informed that its latest eUFS delivers three times the write speed of the previous 512GB eUFS 3.0 mobile memory and breaks the 1 GB/s performance threshold in smartphone storage.
“With our introduction of the fastest mobile storage, smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards. The new eUFS 3.1 reflects our continuing commitment to supporting the rapidly increasing demands from global smartphone makers this year,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics.
The global 3D NAND flash memory market, as per a report by Allied Market Research, is projected to reach $99,769.0 million by 2025, registering a CAGR of 35.3 per cent till 2025. Asia-Pacific is expected to be the highest contributor to the global market, with $3,984.7 million in 2017, and is estimated to reach $48,886.83 million by 2026, registering a CAGR of 37.1 per cent during the forecast period.
Sequential write speed of over 1,200MB/s
Samsung informed that its 512GB eUFS 3.1 boasts more than twice the speed of a SATA-based PC (540MB/s) and over ten times the speed of a UHS-I microSD card (90MB/s). Phones with the new eUFS 3.1, as per Samsung, will take about 1.5 minutes to move 100GB of data whereas UFS 3.0-based phones require more than four minutes.
“In terms of random performance, the 512GB eUFS 3.1 processes up to 60 per cent faster than the widely used UFS 3.0 version, offering 100,000 input/output operations per second (IOPS) for reads and 70,000 IOPS for writes. Along with the 512GB option, Samsung will also have 256GB and 128GB capacities available for flagship smartphones,” read Samsung’s official statement.
It continued, “Samsung began volume production of fifth-generation V-NAND at its new Xi’an, China, line (X2) this month to fully accommodate storage demand throughout the flagship and high-end smartphone market. The company soon plans to shift V-NAND volume production at its Pyeongtaek line (P1) in Korea from fifth-generation to sixth-generation V-NAND to better address the growing demand.”
Global sales of smartphones to end-users, as per a Gartner report, contracted in the fourth quarter of 2019, declining by 0.4 per cent year over year, according to Gartner, Inc. In full-year 2019, smartphone sales declined by one per cent.
