Navitas Semiconductor Opens First-Ever GaN IC EV Design Centre

GaN-based on-board chargers (OBCs) are estimated to charge 3x faster with up to 70 percent energy savings compared to legacy silicon solutions Looking to further expand into higher-power GaN markets, US-based Navitas Semiconductor has announced the opening of a new electric vehicle (EV) Design Center. Based in Shanghai, China, the new design center hosts a … Continue reading Navitas Semiconductor Opens First-Ever GaN IC EV Design Centre