Wednesday, May 09, 2012:
Evaluation boards
In February 2012, Texas Instruments introduced high performance and low cost evaluation boards for high speed data converters.
Features and USP: The TSW1400EVM data capture and pattern generation board evaluates up to 16-bit analogue-to-digital converters (ADCs) and digital-to-analogue converters (DACs). It costs 75 per cent less than the previous generation of such boards, while providing twice the memory. Additionally, the company’s TSW1405EVM for pattern capture and the TSW1406EVM for pattern generation are the lowest cost solutions of their kind by up to 80 per cent, providing simple and ultra low cost platforms for quick evaluation of TI data converters.
For further details: India Product Information Centre; Ph: +91-80-4138 1665; Toll free: +1-800-425-7888; [email protected]
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Compact precharge relays
In February 2012, TE Connectivity launched the Mini K HV, which supports the connection and disconnection of the traction battery in switching assemblies.
Features and USP: As a compact precharge relay, the Mini K HV takes over the charging of the filter capacitors over a precharge resistor directly before the operation of the main relay, protecting the main relay’s contacts from extreme inrush currents. With significantly reduced dimensions of 18.75 x 26.5 x 18.95 mm, the Mini K HV represents a major innovation compared to current precharge relay solutions. A specially optimised design of the switching contacts enables this miniature relay to switch loads of up to 20A at a system voltage of up to 450V.
For further details: www.te.com
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8-bit PIC MCUs
In February 2012, Microchip Technology Inc announced a new family of 8-bit microcontrollers (MCUs) featuring next-generation analogue and digital peripherals.
Features and USP: The PIC12F(HV)752 MCUs feature an integrated Complementary Output Generator (COG) peripheral that provides non-overlapping, complementary waveforms for inputs such as comparators and Pulse Width Modulation (PWM) peripherals, while enabling dead-band control, auto shutdown, auto reset, phase control and blanking control. Additionally, the new MCUs feature 1.75 KB of self read-write program memory, 64B of RAM, an on-chip 10-bit ADC, Capture-Compare PWM modules, high performance comparators (down to 40 ns response), and two 50 mA-capable I/Os, enabling engineers to increase overall system capabilities and reduce costs.
For further details: www.microchip.com
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Voltage level translators
In January 2012, STMicroelectronics introduced its voltage level translator, which is compliant with the Secure Digital (SD) 13.0 standard.
Features and USP: ST6G3244 couples high speed operations with very low power dissipation, supported with the power down mode. Data integrity is secured through propagation delays, electromagnetic-interference filters and signal conditioning.
The voltage level translator incorporates 15 kV air gap electrostatic discharge protection on the card side. The selectable supply (1.8V or 2.9V), 6-bit bi-directional CMOS-level translator for SD, mini-SD and micro-SD memory cards is offered in the BGA25 package. The ST6G3244 is backward pin-to-pin compatible with most existing SD 2.0 products.
For further details: Ph: 4003001; Fax: (0120) 4243417; www.st.com
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Rectifier bridges
In December 2011, Solid State Electronics launched its fast and ultra fast rectifier bridges to make more compact and lower cost equipment.
Features and USP: High switching frequencies generate harmonics and line distortion. It is important that electronic circuits in equipment reduce these influences to meet EMI filtering requirements in compliance with EMI/EMC VDE and other international standards. This noise level can be reduced by up to 10dB when the input rectifier bridges are configured with fast recovery diodes (Trr = 100 nsec to 200 ns) as they enable a faster turn-off resulting in lower peak recovery currents compared to standard recovery normal rectifier diodes. The 25 amp and 35 amp bridges offer up to 5 amps and 8 amps, respectively in free air at ambient temperatures of up to 45° C.
For further details: Ph: +91 – 22 – 2850-3986/2850-8653; Fax: +91-22-2850-6214; www.SolidStateIndia.com
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Power devices
In January 2012, Renesas Electronics Corporation launched three silicon carbide (SiC) compound power devices with a voltage tolerance of 600V.
Features and USP: The RJQ6020DPM device is for critical conduction mode power factor correction (PFC) applications. In a single package, it combines a SiC-SBD and two high voltage power MOSFETs. The reverse recovery time of the SiC-Schottky barrier diode (SBD) is only 15 nanoseconds (ns). The RJQ6021DPM device is for continuous conduction mode PFC applications. It combines in a single package a SiC-SBD and two insulated gate bipolar transistors (IGBTs). The ultra thin wafer IGBTs deliver on voltage of 1.5 V. The RJQ6022DPM device for inverter half bridge circuits combines in a single package two SiC-SBDs and two IGBTs. The IGBTs deliver on voltage of 1.5 V and in a short circuit time of 6 microseconds.
For further details: Ph: 080 67208700; www.renesas.com
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Electronics Bazaar, South Asia’s No.1 Electronics B2B magazine
