In July 2012, Renesas Electronics launched 13 new products in its high performance 7th generation Insulated Gate Bipolar Transistor (IGBT) lineup.
Features and USP: The new IGBTs include the RJH/RJP65S series for 650 V, and the RJP1CS series for 1250 V. These IGBTs are power semiconductor devices used in systems that convert DC into AC power, and are designed for applications that handle high voltages and large currents, such as power conditioners (power converters) for solar power generators and industrial motors. The 7th generation technology, based on the enhanced thin wafer process, sets a low losses trade-off between conduction, switching losses and robustness to withstand short circuit conditions.
For further details: Ph: 080 67208700; sg.renesas.com
